IWATSU SS-660P: A High-Frequency Rogowski Probe for Direct Switching-Parameter Measurement on TO247-4

The 4-pin package version achieves higher efficiency and lower switching loss.

A special feature of the TO247-4 package is the 4-pin connection to the gate driver chip; the fourth pin eliminates

the effect of high-frequency stray inductance of the emitter pin on the gate control loop, thereby enabling the IGBT to respond faster to the gate drive Ice current signal.

SiC IGBT or MOSFET Faster response reduces switching energy loss and enables turn-on/turn-off at higher speed.

Using a 4-pin package instead of a 3-pin package reduces total switching loss by more than 20%.

Higher efficiency increases power density. Lower cost.

Higher efficiency and lower cost are common key requirements for next-generation designs. However, can higher system performance be achieved at lower cost?

Because power devices in inverter circuits have large power losses, the low loss or high efficiency of the power switch directly affects the system power output.

The less energy lost in the system, the more energy is transferred to output power, and the system power density increases accordingly. The less energy lost,

the more energy is transferred to output power, and the lower the output power cost in kW/€.

IWATSU SS-660 and SS-660P series are the world's only high-frequency Rogowski current probes capable of directly testing TO247-4 devices.

*For more detailed information, please contact us.