Page 47 - Voltage

KEYSIGHT optically isolated probe PS0004A high-frequency 350M high-voltage 2500 V double-pulse dynamic test voltage measurement

PMK high-frequency high- BNC probe PKT series 500 MHz high-bandwidth 400 V / 1650 V peak voltage 10:1, 100:1 BNC

JC power device test socket GD18-TO263-7-K-109 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO-263-7 package

For TOLL type GaN device test socket semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation JC GD17-TOLL-K-FL

JC power device test socket GD18-TO263-K-109 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO-263-3 and D2PAK package

JC power device test socket T3P-L214-ST-BK semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO-247-3 and TO-220 package

JC power device test socket T3P-L214-ST-HT semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO-247-3 and TO-220 package (high-temperature)

JC power device test socket T4P-L214-ST-HT semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO-247-4 package (high-temperature)

JC power device test socket T4P-L214-ST-BK semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO-247-4 package

JC power device test socket T3P-L214-ST-BK-SN semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO-247-3 and TO-220 package

JC power device test socket T4P-L214-ST-HT-P semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO-247-4 package (high-temperature)

JC power device test socket T3P-L214-ST-BK-P semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO-247-3 and TO-220 package