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IWATSU IE-1360 Deskew Calibrator for Power-Device Conduction-Loss Measurement

Dynamic switching measurements are highly sensitive to phase accuracy, so deskew is critical: a few nanoseconds between Ton and Toff can cause large errors in the switching-loss measurement of SiC devices. The automatic deskew routine with the IWATSU IE-1360 Deskew Calibrator removes propagation-delay differences between probes and sharply improves switching-loss accuracy.

PCIM Asia 2023: IWATSU DS-8000-SWA Dynamic Parameter Analyzer for SiC Devices

PCIM Asia 2023 runs 29-31 August at the Shanghai New International Expo Centre, with more than 180 exhibitors presenting the latest power-electronics technologies. IWATSU will demonstrate its newly released DS-8000-SWA dynamic parameter analyzer, high-performance optically isolated voltage probes and its high-frequency Rogowski probe family.

Double-Pulse Testing of SiC and IGBT Dynamic Switching: Instruments and DIY Setups

System double-pulse test IGBT module. construction, IGBT. for device, and inverter. A dynamic power analyzer, such as a is used to measure the characteristics of transistors or diodes. In a it necessary to Vds, Vgs, Ids and Igs

Measuring High-Frequency Pulsed Current with Current Transformers

CIC Ultra-High-Voltage Differential Probes: 10 kV, 20 kV and 30 kV

What Is a Wide-Bandgap Semiconductor? Understanding Bandgap Energy

Selecting High-Frequency Rogowski Current Probes: IWATSU and PEM

SiC vs. GaN: Comparing Two Wide-Bandgap Semiconductors

Precision DC, AC and High-Frequency Pulsed Current Shunts: Selection Guide

Zero-Flux Technology: Basic Principles

THE BASIC PRINCIPLEThe primary current lp generates a magnetic flux that will be counteracted by the ls in the secondary winding INs) of the measuring head. Any remaining is sensed three toroidal · wound ring cores locatedwithin the volume. Two of them (N1, N2) are used l0 sense the DC