Cybertek coaxial shunt CSD***B series (type) resistor SiC/GaN power device double-pulse dynamic test 2 W

Product Overview

With the rapid development of modern power electronics, the application of SiC/GaN power devices is becoming increasingly widespread. Engineers need to measure high-speed pulse currents with frequencies up to several hundred

kHz and currents up to tens of amperes. Traditional high-frequency current probes (such as our high-frequency AC/DC probe HCP8000 series)

contain iron cores and shielding layers, which suffer significant loss and heating under high-frequency currents (refer to the current derating curve in the HCP8000 series manual),

so engineers may burn out the current probes when measuring such circuits. A coaxial shunt is a purely

resistive structure, which does not increase loss under high-frequency currents, making it very suitable for high-frequency current measurement.

Our company's ultrawideband Coaxial Shunt (Ultrafast Current Shunt, UFCS) has two connection types:

1. Lead type: CSD***B series coaxial shunt, soldered to the circuit board with two pins.

2. Bolt type: CSD***M series coaxial shunt, fixed to the circuit board using bolts and nuts.

For the bolt type CSD***M series coaxial shunt, users can insert it into the PCB hole and only need to tighten one nut. Compared to the lead type CSD***B series coaxial shunt, the bolt type can be repeatedly installed and removed, making it very convenient for customers.

The bolt fixing mechanical structure of the bolt-type product adopts a brand-new high-reliability design, greatly reducing the possibility of internal structural damage to the coaxial shunt caused by over-tightening the nut.

Product Features:

Ultrawideband Ultrafast Current Shunt (UFCS) with a maximum bandwidth of 2GHz

No high-frequency insertion loss

Multiple resistance options from 0.005Ω to 0.2Ω

Industry-first high-reliability single-nut bolt-type structure

Bolt-type coaxial shunt occupies minimal PCB space

Suitable for current measurement of SiC and GaN semiconductors