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IWATSU SS-662 ultra-fine 1 mm IWATSU Catalog
IWATSU SS-662 ultra-fine 1 mm, SS-662P conductor diameter 1.2 mm high-frequency Rogowski current probe SiC device test TO-247-4 for
  • IWATSU SS-662 ultra-fine 1 mm, SS-662P conductor diameter 1.2 mm high-frequency Rogowski current probe SiC device test TO-247-4 for

IWATSU SS-662 ultra-fine 1 mm, SS-662P conductor diameter 1.2 mm high-frequency Rogowski current probe SiC device test TO-247-4 for

Brand: IWATSU

Origin: Japan

SS-660 (P) series conductor diameter Rogowski coil 1/1.2 mm, clamp-on for GaN device current measurement, withstand voltage 600 V (P 1200 V), high-frequency bandwidth 30 MHz, SS-662(P) measurable peak 60 A saturation
Overview

Main features of the SS-660(P) series:




The coil diameter at the top of the probe is 1mm (1.2mm for type P), very thin.


It can directly detect in narrow areas such as surface-mounted devices.


It has a frequency bandwidth of 30MHz, allowing observation of high-frequency switching waveforms.


The current measurement range is 30A~1200A, supporting various current measurements.


Since it will not experience magnetic saturation, large current measurements can be performed safely.


The probe part has an operating temperature range of -40℃~125℃.


Specifications
Parameter Value
Peak Current 60 A
High Frequency Bandwidth 30 MHz
Low Frequency Cut-off 110 Hz
Frequency Bandwidth 110 Hz~30 MHz
Peak di/dt 4 kA/µs
Sensitivity 100 mV/A
Typical Accuracy ±2%
Noise 5 mV (rms, effective value)
Coil Withstand Voltage 1.2 kV
Operating Temperature -40~+125 °C
Zero Adjustment Yes
Coil Diameter Max 1.2 mm
Coil Length 84±4 mm
Cable Length 1.5 m
Expand IWATSU SS-662 ultra-fine 1 mm

* Specifications are subject to change without notice.