Probemart.com | Probes, current sensors & calibration sources for pulsed-power testing

Bookmark Bookmark
Home > Products > Instruments
IWATSU SS-666 ultra-fine 1 mm IWATSU Catalog
IWATSU SS-666 ultra-fine 1 mm, SS-666P conductor diameter 1.2 mm high-frequency Rogowski current probe SiC device test TO-247-4 for
  • IWATSU SS-666 ultra-fine 1 mm, SS-666P conductor diameter 1.2 mm high-frequency Rogowski current probe SiC device test TO-247-4 for

IWATSU SS-666 ultra-fine 1 mm, SS-666P conductor diameter 1.2 mm high-frequency Rogowski current probe SiC device test TO-247-4 for

Brand: IWATSU

Origin: Japan

SS-660 (P) series conductor diameter Rogowski coil 1/1.2 mm, clamp-on for GaN device current measurement, withstand voltage 600 V (P 1200 V), high-frequency bandwidth 30 MHz, SS-666(P) measurable peak A saturation
Overview

Main Features of SS-660(P) Series:




The coil at the tip of the probe has a diameter of 1mm (1.2mm for P type), very thin


Can be used for detection in narrow places such as directly on surface-mounted devices.


Has a frequency bandwidth of 30MHz, allowing observation of high-frequency switching waveforms.


The current measurement range is 30A~1200A, supporting various current measurements.


Because it does not saturate magnetically, you can safely measure high currents.


The probe part operates at a temperature range of -40℃~125℃






Specifications
Parameter Value
Peak Current 1200 A
High Frequency Bandwidth 30 MHz
Low Frequency Cut-off 9 Hz
Frequency Bandwidth 9 Hz~30 MHz
Peak di/dt 40 kA/µs
Sensitivity 5 mV/A
Typical Accuracy ±2%
Noise 1.8 mV (rms, effective value)
Coil Withstand Voltage 1.2 kV
Operating Temperature -40~+125 °C
Zero Adjustment Yes
Coil Diameter Max 1.2 mm
Coil Length 84±4 mm
Cable Length 1.5 m
Expand IWATSU SS-666 ultra-fine 1 mm

* Specifications are subject to change without notice.