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T&M SSDN-0025 high-frequency non-inducti T&M Research Catalog
T&M SSDN-0025 high-frequency non-inductive coaxial shunt 0.0025 Ω high-precision resistor 2 watt nut
  • T&M SSDN-0025 high-frequency non-inductive coaxial shunt 0.0025 Ω high-precision resistor 2 watt nut

T&M SSDN-0025 high-frequency non-inductive coaxial shunt 0.0025 Ω high-precision resistor 2 watt nut

Brand: T&M Research

Origin: USA

Current Probe. Detailed specifications are available in the product datasheet.
Overview

T&M CVR high-frequency non-inductive resistor, designed for monitoring pulse generator systems, the extremely high peak power and current input produced by steady-state current loads, and transient current monitoring; in recent years, with the rapid development of power semiconductors and wide-bandgap devices, evaluation of device dynamic performance (double-pulse) requires high-precision capture of the current waveforms at the overall turn-on and turn-off instants while minimizing the probe's own insertion loss.  



Key features:


  • GHz measurement bandwidth, picosecond-level measurement delay;

  • Patented technology, extremely low inductance;

  • Monitoring of continuous signals (W) or high-energy pulses (J);

  • 0.2% ultrahigh resistance accuracy;

  • Maximum power dissipation of 2–3 W per unit;

  • Universal BNC-type connector


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 Actual product photo:

37d52745-53f6-42ed-9232-a45a650a9292.png   

Main models have 2 appearances (as shown above),SDN has two pins,SSDN has nut terminals.


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    Typical applications:


  • Pulsed current applications

  • Calibration laboratories

  • Current sensing for phase meters

  • Single-phase angle indicator V-A

  • Three-phase angle indicator V-A

  • Power factor meter

  • High-frequency wattmeter

  • wideband power meter

  • power analysis

  • current transformer calibration

  • phase delay characterization of current probes

  • SCR current measurement

  • current control of automatic welding machines

  • measuring the output of automotive alternators

  • fault current detection to determine AC generator bearing wear

  • electron-beam welding

  • current detection in knock systems

  • three-phase fault testing in transmission substations

  • fault detection in modulators

  • measuring lamp current in laser systems

  • IGBT chopper current control in electric vehicles

  • widely used in double-pulse testing of SiC/GaN wide-bandgap semiconductors


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Widely used in double-pulse testing of SiC/GaN wide-bandgap semiconductors





Specifications

2 Watt Units - 1 7/8 Inch Case

Model

Resistance ohms

Bandpass MHz.

Risetime nsec.

Emax joules

SDN-001

0.001

12

30

12

SSDN-001

0.001

12

30

12

SPT-001

0.001

12

30

12

SDN-0025

0.0025

12

30

28

SSDN-0025

0.0025

12

30

28

SPT-0025

0.0025

12

30

28

SDN-005

0.005

400

1

3

SSDN-005

0.005

400

1

3

SPT-005

0.005

400

1

3

SDN-015

0.015

1200

0.3

1.5

SSDN-015

0.015

1200

0.3

1.5

SPT-015

0.015

1200

0.3

1.5

SDN-10

0.1

2000

0.18

2

SSDN-10

0.1

2000

0.18

2

SPT-10

0.1

2000

0.18

2

3 Watt Units - 3 Inch Case

Model

Resistance ohms

Bandpass MHz.

Risetime nsec.

Emax joules 

SDN-25

0.25

1200

0.3

5

SSDN-25

0.25

1200

0.3

5

SPT-25

0.25

1200

0.3

5

SDN-50

0.5

800

0.45

2.5

SSDN-50

0.5

800

0.45

2.5

SPT-50

0.5

800

0.45

2.5


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* Specifications are subject to change without notice.