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Cybertek coaxial shunt CSE005M15(type me Cybertek Catalog
Cybertek coaxial shunt CSE005M15(type medium-power) resistor SiC/GaN power device double-pulse dynamic test 4 W
  • Cybertek coaxial shunt CSE005M15(type medium-power) resistor SiC/GaN power device double-pulse dynamic test 4 W

Cybertek coaxial shunt CSE005M15(type medium-power) resistor SiC/GaN power device double-pulse dynamic test 4 W

Brand: Cybertek

Origin: China

Resistance 0.005 Ω, rated power 4 W, high-bandwidth 1.5 GHz, 15J
Overview

Product Overview:


With the rapid development of modern power electronics, SiC/GaN power devices are being increasingly applied, and engineers need to measure high-speed pulse currents with frequencies up to several hundred

kHz and currents up to tens of amperes. Traditional high-frequency current probes (such as our company's high-frequency AC/DC probes HCP8000 series)

contain iron cores and shielding layers, which experience significant loss and heating under high-frequency currents (refer to the current frequency derating curve in the HCP8000 series manual),

so engineers may burn out the current probes when measuring these circuits. A coaxial shunt is a pure

resistive structure, and its loss does not increase under high-frequency currents, making it very suitable for high-frequency current detection.

The connection method for the CSE series coaxial shunt Ultrafast Current Shunt (UFCS) is as follows:

When using the CSE series coaxial shunt, the user must use two sets of nuts to clamp two circuit boards, each corresponding to the current

input and output.

The bolt-type coaxial shunt from our company features a newly designed high-reliability mechanical structure, which can greatly reduce the possibility of damaging the internal structure of the coaxial shunt due to over-tightening the nuts.




Product Features:


 High bandwidth: maximum bandwidth 1.5GHz

 No high-frequency insertion loss

 High-reliability bolt-type structure

 Three resistance values to choose from: 0.005Ω, 0.01Ω, 0.05Ω

 Maximum transient energy withstand: 20 Joules, suitable for high-current measurements

 Suitable for current measurement of SiC and GaN semiconductors



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Specifications

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* Specifications are subject to change without notice.