Probemart.com | Probes, current sensors & calibration sources for pulsed-power testing

Bookmark Bookmark
Home > Products > Instruments
IWATSU SS-664 ultra-fine 1 mm IWATSU Catalog
IWATSU SS-664 ultra-fine 1 mm, SS-664P conductor diameter 1.2 mm high-frequency Rogowski current probe SiC device test TO-247-4 for
  • IWATSU SS-664 ultra-fine 1 mm, SS-664P conductor diameter 1.2 mm high-frequency Rogowski current probe SiC device test TO-247-4 for

IWATSU SS-664 ultra-fine 1 mm, SS-664P conductor diameter 1.2 mm high-frequency Rogowski current probe SiC device test TO-247-4 for

Brand: IWATSU

Origin: Japan

SS-660 (P) series conductor diameter Rogowski coil 1/1.2 mm, clamp-on for GaN device current measurement, withstand voltage 600 V (P 1200 V), high-frequency bandwidth 30 MHz, SS-664(P) measurable peak 300 A saturation
Overview

Main features of the SS-660(P) series:




The diameter of the coil at the tip of the probe is 1mm (1.2mm for the P type), very thin.


Can directly probe narrow areas such as surface-mounted devices.


Has a frequency bandwidth of 30MHz, allowing observation of high-frequency switching waveforms.


The current measurement range is 30A~1200A, supporting various current measurements.


Because it does not magnetically saturate, large current measurements can be performed with confidence.


The probe is suitable for temperatures ranging from -40℃ to 125℃.




Specifications
Parameter Value
Peak Current 300 A
High Frequency Bandwidth 30 MHz
Low Frequency Cut-off 32 Hz
Frequency Bandwidth 32 Hz~30 MHz
Peak di/dt 20 kA/µs
Sensitivity 20 mV/A
Typical Accuracy ±2%
Noise 2.5 mV (rms, effective value)
Coil Withstand Voltage 1.2 kV
Operating Temperature -40~+125 °C
Zero Adjustment Yes
Coil Diameter Max 1.2 mm
Coil Length 84±4 mm
Cable Length 1.5 m
Expand IWATSU SS-664 ultra-fine 1 mm

* Specifications are subject to change without notice.