-
PMK high-low-temperature voltage probe ENVI @ PUHT 835-312-U01 probe-55 °C-200 °C high-frequency 500M/1250 Vpk
-
Cybertek passive high-voltage probe HP6603 60 kV DC+ACpk, high-frequency 50 MHz
-
JC power device test socket GD21-R2PAK-K-S141X146-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for R2PAK package
JC power device test socket GD21-R2PAK-K-S141X146-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for R2PAK packageBrand: JC Electronics
Origin: Japan
Power device test:SiC/GaN high-low-temperature, high-, high-voltage, high-current, low inductance. provides an…
-
JC power device test socket GD21-TOLT-K-S103X101-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TOLT package
JC power device test socket GD21-TOLT-K-S103X101-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TOLT packageBrand: JC Electronics
Origin: Japan
Power device test:SiC/GaN high-low-temperature, high-, high-voltage, high-current, low inductance. provides an…
-
JC power device test socket GD26-QDPAK-K-S151X155 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for QDPAK package
JC power device test socket GD26-QDPAK-K-S151X155 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for QDPAK packageBrand: JC Electronics
Origin: Japan
Power device test:SiC/GaN high-low-temperature, high-, high-voltage, high-current, low inductance. provides an…
-
JC power device test socket GD21-HU3PAK-K-S141X142-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for HU3PAK package
JC power device test socket GD21-HU3PAK-K-S141X142-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for HU3PAK packageBrand: JC Electronics
Origin: Japan
Power device test:SiC/GaN high-low-temperature, high-, high-voltage, high-current, low inductance. provides an…
-
JC power device test socket GD18-TO252-K-755 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO252 package
JC power device test socket GD18-TO252-K-755 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO252 packageBrand: JC Electronics
Origin: Japan
Power device test:SiC/GaN high-low-temperature, high-, high-voltage, high-current, low inductance. provides an…
-
KEYSIGHT optically isolated probe PS0008A high-frequency 1 GHz high-voltage 2500 V double-pulse dynamic test voltage measurement
-
KEYSIGHT optically isolated probe PS0006A high-frequency 700M high-voltage 2500 V double-pulse dynamic test voltage measurement
-
KEYSIGHT optically isolated probe PS0004A high-frequency 350M high-voltage 2500 V double-pulse dynamic test voltage measurement
-
PMK high-frequency high- BNC probe PKT series 500 MHz high-bandwidth 400 V / 1650 V peak voltage 10:1, 100:1 BNC
-
JC power device test socket GD18-TO263-7-K-109 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO-263-7 package
JC power device test socket GD18-TO263-7-K-109 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO-263-7 packageBrand: JC Electronics
Origin: Japan
Power device test:SiC/GaN high-low-temperature, high-, high-voltage, high-current, low inductance. provides an…


















More Brands