Page 40 - Voltage

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PMK high-low-temperature voltage probe ENVI @ PUHT 835-312-U01 probe-55 °C-200 °C high-frequency 500M/1250 Vpk

PMK high-low-temperature voltage probe ENVI @ PUHT 835-312-U01 probe-55 °C-200 °C high-frequency 500M/1250 Vpk

PMK high-low-temperature voltage probe ENVI @ PUHT 835-312-U01 probe-55 °C-200 °C high-frequency 500M/1250 Vpk

Brand: PMK

Origin: Germany

ENVI® passive probe non- test, and-55°C to +155°C medium- measurement. 835-312-U01 PUHT:-55°C to 200°C

Cybertek passive high-voltage probe HP6603 60 kV DC+ACpk, high-frequency 50 MHz

Cybertek passive high-voltage probe HP6603 60 kV DC+ACpk, high-frequency 50 MHz

Cybertek passive high-voltage probe HP6603 60 kV DC+ACpk, high-frequency 50 MHz

Brand: Cybertek

Origin: China

Voltage Probe. Detailed specifications are available in the product datasheet.

JC power device test socket GD21-R2PAK-K-S141X146-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for R2PAK package

JC power device test socket GD21-R2PAK-K-S141X146-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for R2PAK package

JC power device test socket GD21-R2PAK-K-S141X146-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for R2PAK package

Brand: JC Electronics

Origin: Japan

Power device test:SiC/GaN high-low-temperature, high-, high-voltage, high-current, low inductance. provides an…

JC power device test socket GD21-TOLT-K-S103X101-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TOLT package

JC power device test socket GD21-TOLT-K-S103X101-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TOLT package

JC power device test socket GD21-TOLT-K-S103X101-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TOLT package

Brand: JC Electronics

Origin: Japan

Power device test:SiC/GaN high-low-temperature, high-, high-voltage, high-current, low inductance. provides an…

JC power device test socket GD26-QDPAK-K-S151X155 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for QDPAK package

JC power device test socket GD26-QDPAK-K-S151X155 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for QDPAK package

JC power device test socket GD26-QDPAK-K-S151X155 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for QDPAK package

Brand: JC Electronics

Origin: Japan

Power device test:SiC/GaN high-low-temperature, high-, high-voltage, high-current, low inductance. provides an…

JC power device test socket GD21-HU3PAK-K-S141X142-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for HU3PAK package

JC power device test socket GD21-HU3PAK-K-S141X142-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for HU3PAK package

JC power device test socket GD21-HU3PAK-K-S141X142-FL semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for HU3PAK package

Brand: JC Electronics

Origin: Japan

Power device test:SiC/GaN high-low-temperature, high-, high-voltage, high-current, low inductance. provides an…

JC power device test socket GD18-TO252-K-755 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO252 package

JC power device test socket GD18-TO252-K-755 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO252 package

JC power device test socket GD18-TO252-K-755 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO252 package

Brand: JC Electronics

Origin: Japan

Power device test:SiC/GaN high-low-temperature, high-, high-voltage, high-current, low inductance. provides an…

KEYSIGHT optically isolated probe PS0008A high-frequency 1 GHz high-voltage 2500 V double-pulse dynamic test voltage measurement

KEYSIGHT optically isolated probe PS0008A high-frequency 1 GHz high-voltage 2500 V double-pulse dynamic test voltage measurement

KEYSIGHT optically isolated probe PS0008A high-frequency 1 GHz high-voltage 2500 V double-pulse dynamic test voltage measurement

Brand: Keysight Technologies

Origin: USA

Isolated Voltage Probe. Detailed specifications are available in the product datasheet.

KEYSIGHT optically isolated probe PS0006A high-frequency 700M high-voltage 2500 V double-pulse dynamic test voltage measurement

KEYSIGHT optically isolated probe PS0006A high-frequency 700M high-voltage 2500 V double-pulse dynamic test voltage measurement

KEYSIGHT optically isolated probe PS0006A high-frequency 700M high-voltage 2500 V double-pulse dynamic test voltage measurement

Brand: Keysight Technologies

Origin: USA

Isolated Voltage Probe. Detailed specifications are available in the product datasheet.

KEYSIGHT optically isolated probe PS0004A high-frequency 350M high-voltage 2500 V double-pulse dynamic test voltage measurement

KEYSIGHT optically isolated probe PS0004A high-frequency 350M high-voltage 2500 V double-pulse dynamic test voltage measurement

KEYSIGHT optically isolated probe PS0004A high-frequency 350M high-voltage 2500 V double-pulse dynamic test voltage measurement

Brand: Keysight Technologies

Origin: USA

Isolated Voltage Probe. Detailed specifications are available in the product datasheet.

PMK high-frequency high- BNC probe PKT series 500 MHz high-bandwidth 400 V / 1650 V peak voltage 10:1, 100:1 BNC

PMK high-frequency high- BNC probe PKT series 500 MHz high-bandwidth 400 V / 1650 V peak voltage 10:1, 100:1 BNC

PMK high-frequency high- BNC probe PKT series 500 MHz high-bandwidth 400 V / 1650 V peak voltage 10:1, 100:1 BNC

Brand: PMK

Origin: Germany

PKT cable typical application (and), BNC BNC. system bandwidth up to 500 MHz, rise time 700ps. with high-frequ…

JC power device test socket GD18-TO263-7-K-109 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO-263-7 package

JC power device test socket GD18-TO263-7-K-109 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO-263-7 package

JC power device test socket GD18-TO263-7-K-109 semiconductor SiC/GaN MOSFET mounting fixture dynamic / static parameters precision evaluation for TO-263-7 package

Brand: JC Electronics

Origin: Japan

Power device test:SiC/GaN high-low-temperature, high-, high-voltage, high-current, low inductance. provides an…

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